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| savantic semiconductor product specification silicon npn power transistors buw11f BUW11AF description with to-3pfa package high voltage ;high speed applications converters inverters switching regulators motor control systems pinning (see fig.2) pin description 1 base 2 collector 3 emitter l absolute maximum ratings(ta=25 ) symbol parameter conditions value unit buw11f 850 v cbo collector-base voltage BUW11AF open emitter 1000 v buw11f 400 v ceo collector-emitter voltage BUW11AF open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 5 a i cm collector current-peak 10 a i b base current 2 a i bm base current-peak 4 a p t total power dissipation t c =25 41 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-a thermal resistance from junction to ambient 35 k/w
savantic semiconductor product specification 2 silicon npn power transistors buw11f BUW11AF characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit buw11f 400 v ceo(sus) collector-emitter sustaining voltage BUW11AF i c =0.1a ; i b =0; l=25mh 450 v buw11f i c =3a; i b =0.6a v cesat collector-emitter saturation voltage BUW11AF i c =2.5a; i b =0.5a 1.5 v buw11f i c =3a; i b =0.6a v besat base-emitter saturation voltage BUW11AF i c =2.5a; i b =0.5a 1.4 v i ces collector cut-off current v ce =rated v ces ; v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe-1 dc current gain i c =5ma ; v ce =5v 10 35 h fe-2 dc current gain i c =0.5a ; v ce =5v 10 35 switching times resistive load t on turn-on time 1.0 s t s storage time 4.0 s t f fall time for buw11f i c =3a ;i b1 =-i b2 =-0.6a for BUW11AF i c =2.5a ;i b1 =-i b2 =-0.5a 0.8 s savantic semiconductor product specification 3 silicon npn power transistors buw11f BUW11AF package outline fig.2 outline dimensions(unindicated tolerance: 0.30mm) |
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